US and Russian scientists try to develop diamond film without pressure method

Abstract Recently, researchers from Rice University and Moscow have made a breakthrough in diamond film technology. Published in the American Chemical Society's journal *Nano Letters*, their study explores a pressureless method to create ultra-thin diamond films. The team discovered that under specific conditions, chemically induced phase transitions can lead to the complete growth of diamond films without the need for high-pressure equipment or extreme conditions.
In this innovative approach, scientists successfully developed a new type of diamond film called "dimane." This ultra-thin material retains all the exceptional properties of traditional diamond, including high thermal conductivity, excellent hardness, and semiconductor characteristics. Unlike conventional methods, the process doesn’t require any external pressure, making it more accessible and potentially scalable. Diamane has shown great potential in various advanced applications. According to Sorokin, a senior researcher at the Institute of Superhard Materials and New Carbon Materials in Moscow, dimane could be used as an ultra-thin dielectric layer in nanocapacitors or as a critical component in nanoelectronic devices. Its unique properties also make it promising for use in next-generation semiconductors and microelectromechanical systems (MEMS). A recent image published alongside the research illustrates the phase diagram of the dimane film, which was developed from a single layer of graphene. The diagram shows how graphene transforms into a flawless diamond crystal through controlled chemical reactions. This transformation is guided by temperature, pressure, and other environmental factors, offering a clear roadmap for future experiments. The production of such a two-dimensional diamond material was previously considered impossible using traditional techniques. However, scientists like Richard Feynman laid the groundwork for such innovations by exploring surface chemistry and atomic-level interactions. In this study, researchers used computer simulations to model the atomic forces involved in the formation of dimane, including the role of hydrogen atoms as catalysts during the reaction. Hydrogen played a crucial role in the experiment. When introduced, it removed an electron from a carbon atom in the graphene layer, breaking a bond and leaving a free electron behind. This process allowed the carbon atoms to rearrange and form a diamond-like structure with minimal energy input. The result was a stable, ultra-thin diamond film with remarkable mechanical and electronic properties. If multiple layers of graphene are used, the reaction proceeds in a domino-like fashion, starting from the top and moving downward. Once the entire structure reacts, the final product is a perfect diamond crystal. This method opens up new possibilities for creating high-quality, defect-free diamond films at the nanoscale. According to Yakobson, while chemical vapor deposition (CVD) is another common method for producing diamond films, it often results in polycrystalline structures with inherent defects. These defects can limit its use in high-performance applications such as wide-bandgap semiconductors. Diamane, on the other hand, offers a superior alternative with fewer imperfections and greater stability. This groundbreaking research marks a significant step forward in materials science, paving the way for new applications in electronics, energy storage, and beyond. With further development, dimane could revolutionize the way we design and manufacture advanced nanomaterials.

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