The Fraunhofer ISE Institute in Germany has made a breakthrough by developing a new silicon carbide (SiC) device capable of withstanding up to 10 kV. This advanced semiconductor is designed for use in DC-DC converters that power medium-voltage equipment, marking a significant step forward in power electronics. The improved efficiency of these devices is expected to play a crucial role in the development of future energy grids, especially those supporting renewable energy sources.
Currently, silicon carbide components rated at 1700 volts are widely used in commercial applications. However, researchers are now focusing on creating SiC devices that can handle higher voltages while minimizing switching losses. "In the low-voltage range, we've already demonstrated the effectiveness of silicon carbide in power electronics," said Dirk Kranzer, head of the research team. "Now, our goal is to explore its potential in the 10 kV medium-voltage range."
A recent experiment involved a 30 kW DC-DC converter that operated with an input voltage of 3.5 kV and an output of 8.5 kV, achieving an impressive electrical efficiency of 98.5%. The new SiC devices used in the circuit operate at a switching frequency 15 times higher than traditional components. These SiC chips were supplied by CREE, a leading manufacturer of silicon carbide technology based in Germany.
This next-generation silicon carbide power equipment offers not only high efficiency but also a reduced number of internal components, making it more compact and easier to integrate into various systems. Its potential extends beyond power engineering, with promising applications in the rail industry and other sectors requiring reliable, high-performance power solutions.
As the demand for efficient and sustainable energy systems grows, innovations like this will be key in shaping the future of power electronics and grid infrastructure.
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