The Fraunhofer ISE Institute in Germany has made a significant breakthrough by developing a new silicon carbide (SiC) device capable of withstanding a blocking voltage of 10 kV. This advanced semiconductor is designed for use in DC-DC converters within medium-voltage power systems, offering improved performance and efficiency in power electronics. The development represents a major step forward in the field of power engineering, particularly for future renewable energy grid infrastructure.
Silicon carbide devices with a blocking voltage of 1700 volts have already gained wide commercial acceptance. However, researchers are now focusing on pushing the technology further, aiming to create SiC components that can handle higher voltages while reducing switching losses. "In the low-voltage range, we've successfully demonstrated the potential of SiC in power electronics," said Dirk Kranzer, leader of the research team. "Our current work focuses on testing these devices in the medium-voltage range, specifically at 10 kV."
A recent experiment involved a 30 kW DC-DC converter operating with an input voltage of 3.5 kV and an output of 8.5 kV, achieving an impressive electrical efficiency of up to 98.5%. The new SiC devices used in the circuit operate at a switching frequency 15 times higher than traditional components, significantly improving system performance. The SiC modules were supplied by CREE, a leading German manufacturer known for its high-quality silicon carbide products.
This next-generation SiC power equipment not only delivers superior efficiency but also reduces the number of internal components, resulting in a more compact and reliable design. These advantages open up new possibilities for applications in both the power engineering and rail industries, paving the way for more efficient and sustainable energy solutions in the future.
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